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University of Cambridge Installs Further AIXTRON System

Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned

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By: DAVID SAVASTANO

Contributing Editor, Coatings World and Ink World, Coatings World and Ink World Magazine

AIXTRON SE announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS 6×2-inch system will be configured to handle single 6-inch (150mm) wafers (1×6-inch).

“We will be using the systems to expand our research efforts for LED and electronic devices based on gallium nitride (GaN) epitaxy on 6-inch silicon wafers,” commented Professor Sir Colin Humphreys, director of research in the Department of Materials Science and Metallurgy. “We already use one CCS 6×2-inch system in our work, but the gathering pace of GaN-on-Si development means that we need an extra system with large diameter wafer handling.”

“AIXTRON is proud to continue its long-standing collaboration with the University of Cambridge and to supply another state-of-the-art CCS research system to complement the university’s existing reactor,” Tony Pearce, managing director at AIXTRON Ltd., said. “Under Prof. Humphreys’ lead, the Cambridge group has developed world leading GaN-on-Si processes, and we look forward to further supporting this work with this new system.”

“We are very pleased to announce this repeat order from Prof. Colin Humphreys and his team, pioneers of the GaN-on-Si technology, as they push the industry forward to success,” Dr. Frank Schulte, vice president AIXTRON Europe, added. “Using silicon substrates for power electronics and LED applications, this technology should gain a big share from the existing market.”

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